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Abstract

In this paper, a comparative study between conventional and junctionless multi-gate transistors is made with respect to unity gain cut-off frequency (f_t) and non-quasi static (NQS) delay using TCAD simulations. The comparison is done with and without leakage current (I_OFF) matching. Two structures, typical FinFET like trigate structure and gate all around structure with circular cross section, are considered in this study. It is found that compared to junctionless transistor, conventional devices show better f_t and lesser NQS delay in both trigate and GAA transistors. When the I_OFF matching constraint is met by adjusting the gate electrode work function, the conventional devices show no or weak I_OFF dependency due to screening effect whereas junctionless devices show strong dependency on I_OFF, with respect to f_t and NQS delay.