DefinePK

Abstract

This paper presents a gate drive with overcurrent protection circuit using IR2110 for MOSFETs and IGBTs, which have fast switching capability and simple control scheme. The proposed gate drive circuit is able to achieve fast switching thanks to high speed operation devices with lower reverse recovery time. Apart of fast switching operation capability, an overcurrent protection circuit is also implemented for the power switches, hence ensuring reliability and high robustness of the proposed circuit. This paper also evaluates a dead-time circuit that is used to prevent commutation problem during high side and low side switches transitions. The advantages of the proposed gate drive circuit are; it is capable to drive two power switches using a single driver circuit, while providing an isolation between high side and low side power switches. A test prototype circuits for a single-phase half-bridge DC to AC converter with the proposed gate drive circuit was developed to investigate its operation and behaviour. Experimental results are shown to verify the effectiveness of the proposed circuit.