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Simulation method of a pinned photodiode with no image lag and dark current

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Title: Simulation method of a pinned photodiode with no image lag and dark current

Authors: Jimin Cheon

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2015

Volume: 10

Issue: 16

Language: English

Categories
Electrical Engineering (5972) Optics (304) Image Sensors (2) Simulation (454) Semiconductor Devices (49)

Abstract

In this paper, the simulation method of a pinned photodiode (PD) with no image lag and dark current is proposed. The pinned PD has a shallow p+ layer on top of the conventional PD to create the pinning effect. The simulated PD has a one fifth of image lag compared with the conventional one, with much less dark current as well. Silvaco TCAD simulators, mostly ATLAS device simulator, have been used for simulation.

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