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Title: Properties of GE-DOPED silica preform by Raman spectroscopy
Authors: A. S. Siti Shafiqah, Y.M Amin, R. Md Nor, N. Tamchek, Khairul Anuar M.S., H.A. Abdul Rashid, D. A. Bradley
Journal: ARPN Journal of Engineering and Applied Sciences
Publisher: Khyber Medical College, Peshawar
Country: Pakistan
Year: 2015
Volume: 10
Issue: 15
Language: English
Keywords: Raman spectroscopyGe-doped silicaMCVD
In the present work, the structural modifications of Ge- doped silica preforms due to γ-irradiation at room temperature have been investigated using Raman spectroscopy. The MCVD fabricated preforms labelled as P1 and P2 are distinguishable by the oxidation and thermal history during the fabrication process, in which related to the oxygen bonding of SiO4 tetrahedral. From Raman analysis, the 480 cm-1(D1) and 609 cm-1(D2) peaks are the main network features of pure and doped silica glass, suggest the formation of defect centers in the preforms. The structural modifications of this defects centers are more sensitive in P2 , due to the oxygen deficient state of the preform.
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