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Effect of structural and doping parameter variations on NQS delay, intrinsic gain and NF in junctionless FETs

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Title: Effect of structural and doping parameter variations on NQS delay, intrinsic gain and NF in junctionless FETs

Authors: B. Lakshmi, R. Srinivasan

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2015

Volume: 10

Issue: 4

Language: English

Categories
Electrical Engineering (5972) Device Physics (6) Semiconductor Devices (49) Solid-State Physics (11) Microelectronics (45)

Abstract

This paper investigates the effect of process variations on RF metrices, non-quasi static (NQS) delay, intrinsic gain and noise figure (NF) in 30 nm gate length Junctionless FET by performing extensive 3D TCAD simulations. Sensitivity of NQS delay, intrinsic gain and NF on different geometrical parameters and fin doping are studied. The most significant parameters are found to be gate length, fin width and fin doping. The underlap and gate oxide thickness have a least impact over these RF metrics.

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