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An analysis of D-Band Gunn diode for millimeter wave application

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Title: An analysis of D-Band Gunn diode for millimeter wave application

Authors: Zaffrul Zulkarnain Aziz Masuaud, Mohd Azlishah Othman, Nadhirah Ali, Hamzah Asyrani Sulaiman and Mohamad Zoinol Abidin Abd. Aziz

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2015

Volume: 10

Issue: 2

Language: English

Categories
Electrical Engineering (5972) Millimeter Waves (2) Diodes (3) Microwave Engineering (147) Semiconductor Devices (49)

Abstract

A planar InP-based Gunn diode is designed for millimeter wave application. The SILVACO TCAD tool is utilized to generate the structure and I-V characteristic of Gunn diode. The design specification mainly focuses on varying the diameter of cathode area in three different values which are 0.8um, 1.0um and 1.2um. It can be seen that the threshold voltage and current display their powerful dependences on the 0.8um diameter of cathode area. The threshold voltage precisely at 7V alongside the current value is approximate 1.6A. In this paper, the diameter of cathode area is optimized. The results greatly propose that lower cost and high reliable InP planar Gunn diode can be utilized as single chip terahertz sources.

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