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An analysis of d band Schottky Diode for millimeter wave application


Article Information

Title: An analysis of d band Schottky Diode for millimeter wave application

Authors: Nur Hazirah Binti Jamil, Nadhirah Ali, Mohd Azlishah Othman, Mohamad Zoinol Abidin  Abd. Aziz and Hamzah Asyrani Sulaiman

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2015

Volume: 10

Issue: 2

Language: English

Categories

Abstract

A Schottky Diode for millimeter wave application proposed in this paper. The proposed model includes the n-well thickness as a variable to explain the operational behavior of a planar Schottky Barrier Diode which is firstly introduced in this paper. This paper shows the differentiation the length of the n-well thickness with three lengths which are 1.6 µm, 1.4 µm and 1.2µm. Then, the size of the Schottky Diode becomes too small with dimension 2.0µm x 2.0µm. The suitable materials that used in this diode are silicon where it has a more advantages than other materials. The Schottky Diode was designed by using the Silvaco TCAD tools software whereas it’s also produced the IV and CV Characteristics graph. Both graphs were analyzed after the three comparison the length of the n-well thickness was specified the values.


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