DefinePK

Abstract

The paper presents the results of a comparative analysis of X-FAB’s technologies to obtain the most optimal parameters of drain current and the Hall voltage of the Hall element as a component of an integrated circuit with linear output formed in CMOS technology. It has simulated Hall elements in TCAD and found out that XH035 technology allows providing the most optimal parameters of drain current and the Hall voltage of the Hall element. Simulation results of the dependence of the Hall voltage on the width W of the Hall element at the length L = 200 µm have shown that the optimum ratio of the width W to the length L of the Hall element is within 1.25 <W/L <1.5. The paper has also simulated the dependence of the Hall voltage on the size of Hall contacts and shown that the most optimal size of Hall contacts in relation to the Hall voltage and required space is from 0 to 10 µm for L = 200 µm.