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Abstract

This paper deals with the design of Low Noise Amplifier using MODFET for Wireless Communication. The proposed LNA will be operating at 6 GHz and uses two stages for improved gain and low noise figure. The first stage is based on Common source which is followed by the second stage of cascading configuration. The transistor used in this design is based on p-HEMT technology from Sirenza micro devices. Advanced Design System (ADS) is used to design this LNA. The individual stages include capacitors and inductors for DC bias. The input and output matching networks are designed using microstrip transmission lines. The simulation results show gain of 28.27 dB and noise figure as 0.83 dB at 6 GHz with biasing voltage at 3.0 V.