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Design and analysis of A 3-bit RF MEMS tunable capacitor

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Title: Design and analysis of A 3-bit RF MEMS tunable capacitor

Authors: Grigoriy Alagashev, Artem Gulyaev, Roman Salatov

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2016

Volume: 11

Issue: 19

Language: English

Categories
MEMS (16) Electrical Engineering (5972) Tunable Components (1) Microwave Engineering (147) RF Engineering (43)

Abstract

A 3-bit radio frequency micro electromechanical (RF MEMS) tunable capacitor with electrostatic actuation and a wafer-level package is presented. The structure is made of Au with SiN as an isolation layer. According to one-port measurements, capacitance range is from 0.6 to 1.4 pF and minimal resistance is 0.5 Ohm. Maximum obtained Q-factor is 60 at 6.5 GHz. Q-factor at low frequencies is limited by a low shunt resistance. Activation voltage is 14 V. The capacitor suffers from dielectric charging effect.

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