DefinePK

Abstract

Silicon on insulator (SOI) technology refers to the use of a layered silicon-insulator-silicon substrate in place of conventional silicon substrate or known as a Buried oxide layer (BOX). SOI Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been introduced to enhance the drive current (ION) and low short channel effect (SCE). The virtual device fabrication and characterization were executed by using ATHENA and ATLAS modules from SILVACO TCAD tool. In this paper, an orthogonal array of L9 in Taguchi method was used to analyze the consequence of Source/Drain factor toward ION in SOI Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device. Four process parameter (control factor) has been chosen to perform nine experiments considering the interaction effect towards 10nm SOI MOSFET, whereas two noise factor were varied for 2 levels to get four reading of ION for every row of the experiment. The signal-to-noise (S/N) ratio of a ION for an SOI MOSFET device is 56.40 dB and within the predicted range. As conclusion, it is shown that L9 orthogonal array in Taguchi method is effectively can predict the best solution to finding the best setting level to produce the highest ION. Based on analysis of variance, S/D Implant energy is one of the significant factors that effecting ION in SOI MOSFET.