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Abstract

Titanium dioxide (TiO2) thin films were deposited on silicon substrates by using a sol-gel dip coating technique. In order to study the influences of the deposition layer on the properties of TiO2 films, the number of layer was varied. Then, the TiO2 films were analyzed by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and four- point probe. Generally, all films are uniform without the presence of any grain or grain boundary. The TiO2 films were confirmed by energy-dispersive X-ray spectroscopy (EDS) which indicates the presence of titanium (Ti) and Oxygen (O). It was found that, the thickness and crystallite size of the films increases as the deposition layers increased. On the contrary, the resistivity of the TiO2 films decreases in the range of 5.80 x 102 O.cm and 1.45 x 102 O.cm as the deposition layer increased. Therefore, it has been determined that the properties of TiO2 films were strongly correlated with the thickness of the films.