DefinePK

Abstract

Tin oxide (SnO2) is one of the semiconductor that has unique optical and electrical properties and high chemical stability so it is suitable to be deposited onto glass, ceramics, oxides, and other substrate materials. However, it has a very high electrical resistivity due to its low intrinsic carrier density and mobility. Intrinsic tin oxide is an insulator, yet upon doping with other elements such as antimony, fluorine, indium and etc., electrical conductivity can be enhanced extensively. Currently, tin doped indium oxide is the most extensively used electrodes due to its low resistivity and highly transmittance. However, indium is a rare material, expensive and has high toxicity. A good TCO must have low resistivity, high transmittance in the visible region, and high chemical stability. These properties can be changed by doping process with aluminum. Aluminum doped tin oxide is prepared by spray pyrolysis deposition method using a mixture of aluminum nitrate 9-nitrate with tin (iv) chloride pentahydrate as precursor and sprayed on a glass substrate. Five samples with different annealing time were analyzed. The annealing time was from 1 hour to 5 hour with an hour of interval for each group of samples. Optical and electrical parameters were measured and calculated. Surface morphology were being observed and analyzed. The percentage of atomic element is analyzed by using an energy dispersive x-ray spectroscopy (EDS). For application on window layer of solar cells, high transmittance archived on the samples deposited. Thin films thickness was obtained by using a thickness profiler for the use of resistivity and sheet resistance. A mechanism condition of thin film is proposed and discussed; initially the visual yellow color of some samples, related with a preparation of precursor solution, is associated to the amount of aluminum nitrate with tin chloride. The comparison of all characterization result shows sample that have been annealed for about 4 hours give the best conditions of TCO properties.