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Hall integrated plate research and simulation


Article Information

Title: Hall integrated plate research and simulation

Authors: Yury Goryachkin, Alexander Odnolko, Mikhail Pavlyuk, Alexander Svistunov

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2016

Volume: 11

Issue: 7

Language: English

Keywords: Hall VoltageTCAD SimulationHall integrated plateCMOS processHall plate simple model

Categories

Abstract

The article analyzes an opportunity of the rectangular form Hall plates’ application, formed within the CMOS XFAB process with the XT018 μm design rules as a part of IC with linear output. The Hall plate simulation in TCAD was carried to optimize the design and size. It is shown that the Hall plate width W and length L balance is within 1.25 W/L <1.5. The Hall plate simple model was offered and the formula for Hall voltage was developed, explaining the Hall voltage saturation phenomenon with ratio W/L > 1.5.


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