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Computer simulation of thermo-mechanical stresses in components of power semiconductor devices


Article Information

Title: Computer simulation of thermo-mechanical stresses in components of power semiconductor devices

Authors: К. N. Nishchev, M. I. Novopoltsev, М. А. Bakulin, V. А. Martynenko, А. V. Grishanin

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2016

Volume: 11

Issue: 3

Language: English

Categories

Abstract

The article presents the results of computer simulation of thermo-mechanical stresses and deformations in the components of power semiconductor devices (PSD) consisting of electrically active silicon crystal and molybdenum temperature compensator put together with the use of two technologies: the technology of low-temperature sintering with an intermediate silver paste layer and the technology of welding with layer of aluminum alloy. The calculations were carried out by the method of finite element analysis using ANSYS software. Results of computer simulation demonstrate that the level of mechanical stresses in the components of PSD with a layer containing sintered silver paste is much lower than in the components with a layer containing aluminum alloy. Based on calculations it can be concluded that the maximum thermo-mechanical stresses during fabrication of these components occur at their periphery in the ring region, where the width is approximately equal to the thickness of PSD component.


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