DefinePK

Abstract

As the MOSFETs becoming smaller, the process parameters of the MOSFET are difficult to be perfectly controlled which eventually leads to the statistical variation of many process variables. The statistical modeling is one of the approaches that can be implemented to control the process parameter variations, thereby optimizing the device characteristics. This paper presents a comparative study of Taguchi method and central composite design (CCD) for optimizing the process parameters in Vertical Double Gate MOSFET. The L27 orthogonal array of Taguchi method and CCD has been utilized to optimize six process parameters towards the device characteristics. The comparative analysis between Taguchi method and CCD for optimizing the process parameters in vertical double-gate MOSFET are performed in term of their efficiency and simplicity. The observation of the final results indicates that the Taguchi method is the most suitable statistical tools over the CCD for optimizing the process parameters in the device due to its simplicity (requires less experiment runs) and its efficiency (better in overall device characteristics).