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Abstract

The article describes research results and comparative analysis of different configuration of Hall elements designed within the XFAB XH035 process. Three most common Hall elements structures: Rectangles, cross diamond-shape and quadruple Hall element, consisting of four paralleled single Hall elements of rectangular configuration, researched. The relationship between drain current, offset voltage, sensitivity and drain voltage and relationship between drain current, sensitivity and dimension impact of Hall element (width and length) researched. Analysis carried out to choose the most efficient configuration of Hall element in conjunction with following characteristics: current consumption, sensitivity and offset voltage to use the Hall element as a part of integrated circuit with linear output. In addition, the comparative analysis of main characteristics of designed Hall elements and Hall elements manufactured by bipolar technology, by “Silicon on insulator” technology and by gallium-arsenide technology, carried out.