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SPICE model of Memristor with threshold switching characteristics


Article Information

Title: SPICE model of Memristor with threshold switching characteristics

Authors: N. Khadar Basha, T. Ramashri

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2018

Volume: 13

Issue: 7

Language: English

Categories

Abstract

A novel technology Memristor is one of the most promising in the view of their low power consumption, good scalability, and state retention without need of power supply, simple cell structure, nonlinear functionality and compatibility with CMOS technology. From circuit model designer's point of view, any model is to be simple and at the same time, it is as complex as to produce the device properties and applications. The Memristor modeling is challenging task because of the linear and nonlinear complexity of the mechanism. we design, reliable SPICE Memristor models with threshold switching functionality by using physical parameters and mathematical equations that works based on quantum tunnelling phenomenon provides nonlinear do pant drift and exhibits threshold voltage switching effect with accurate Memristor simulation characteristics over a wide range of input voltage and frequency.


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