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Base thickness optimization of a vertical series junction Silicon solar cell under magnetic field by the concept of back surface recombination velocity of minority carrier


Article Information

Title: Base thickness optimization of a vertical series junction Silicon solar cell under magnetic field by the concept of back surface recombination velocity of minority carrier

Authors: Gora Diop, Hamet Yoro Ba, Ndeye Thiam, Youssou Traore, Babou Dione, Mamour B. A., Pape Diop, Masse Samba Diop, Oulimata Mballoand Gregoire Sissoko

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2019

Volume: 14

Issue: 23

Language: English

Categories

Abstract

In this work, a method to determine the optimum thickness of a vertical series junction silicon solar cell by the intersection of back surface recombination velocities is proposed. The vertical series junction Silicon solar cell is studied under magnetic field inducing the diffusion coefficient D (B). The optimum base thickness is obtained by intersection of two back surface recombination velocities curves whose the expressions are function base thickness and magnetic field.


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