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Failure analysis in focused ion beam (FIB) technology of ion channeling contrast (ICC) and electron channeling contrast (ECC): A review

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Title: Failure analysis in focused ion beam (FIB) technology of ion channeling contrast (ICC) and electron channeling contrast (ECC): A review

Authors: Nornikman Hassan, Badrul Hisham Ahmad, Mohd. Zukhairi Md Sarip, P. E. Lim, Zahriladha Zakaria

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2019

Volume: 14

Issue: 13

Language: English

Categories
FIB (1) Failure Analysis (43) Microscopy (82) Materials Science (8025) Electron Microscopy (9)

Abstract

This paper is review on the failure analysis in semiconductor area, especially in the integrated circuit (IC) design. Firstly, the literature review is done based on the keyword of focused ion beam (FIB). The FIB is one of the important micro-/nano-fabrication tools preparation of and transmission electron microscopy (TEM) tool. In FIB, two different channeling contrast techniques can be used. The first one the ion channeling contrast (ICC) and second one is the electron channeling contrast (ECC). These two techniques are using in different situation and had been different effect at the sample. The several previous works on this ICC and ECC techniques by several researchers are reviewed in this paper.

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