DefinePK

Abstract

Tunnel FET (TFET) is a promising device for ultra-low power applications because it has the benefits of band to band tunneling (BTBT) behavior of operating mechanism and achieving the sub-threshold swing (SS) value of less than 60mV/dec. However, it suffers from low ON state current and ambipolar in nature. In addition, it also has poor analog/RF performances. To address these problems, a novel dual electrode and a double metal gate Doping-less TFET (DE-DMGDLTFET) is proposed in this work by using charge plasma technique. To improve the BTBT rate and ON-state current, a tunneling gate length (Ltg) of proper work function is created at the source-channel junction. The distance between the source and gate electrode (Lgs) is kept at a minimum of 2 nm significantly, to reduce the ambipolar behavior. To enhance the analog/RF performance, a dual electrode structure is proposed on both sides of source and drain regions to induce the carriers uniformly. By using Silvaco TCAD simulator, different n-type DLTFET structures are designed and compared. The overall DC and analog/RF performance of all the DLTFETs are investigated. The proposed DE-DMGDLTFET achieved a higher ON current of5.26 x 10-7 A/µm at Vgs and Vds =0.5 V, SS of 30.27 mV/dec, Cut-off frequency range from MHZ to GHz and suppress the ambipolar order of 1010 effectively.