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Thermal Macro-Modeling and Safe Operating Area Analysis of MOSFETs


Article Information

Title: Thermal Macro-Modeling and Safe Operating Area Analysis of MOSFETs

Authors: M. Sudais Khan, Yaseer A. Durrani

Journal: International Journal of Innovations in Science & Technology

HEC Recognition History
Category From To
Y 2024-10-01 2025-12-31
Y 2023-07-01 2024-09-30
Y 2021-07-01 2022-06-30

Publisher: 50SEA JOURNALS (SMC-PRIVATE) LIMITED

Country: Pakistan

Year: 2025

Volume: 7

Issue: 7

Language: en

Keywords: thermal modelingPower Electronics CircuitsLtspiceSafe Operating AreaMosfets

Categories

Abstract

Thermal dissipation in electronic circuits is always an important design constraint. Excessive heat can degrade component performance, reduce lifespan, and in severe cases, cause permanent failure. This paper uses the thermal modeling approach at the circuit level and focuses on the Safe Operating Area (SOA) of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). The SOA defines the operational limits of MOSFETs by considering the power dissipation to prevent thermal runaway and device failure. In the area of power electronics, it is important to ensure the reliability and efficiency of circuits under different thermal conditions. In this paper, the thermal behavior of MOSFETs is modeled considering factors such as ambient temperature, gate capacitance, PCB (printed circuit board) thermal dissipation, and heatsink addition. This research highlights the importance of thermal design principles in predicting the junction and case temperatures of MOSFETs under various operating conditions. This systematic approach to thermal macro-modeling is crucial for optimizing the performance and reliability of electronic circuits, particularly in high-power applications where thermal management is a critical concern.


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