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Abstract

InSb microcrystal doped with Cr, Al or Sn, which were radiation-resistant and were applied as magnetic microsensors in Satellites. The magnetic field sensitivity, , as a function of temperature was determined for both Bi and Te doped InSb microcrystals. Tellurium doping of InSb microcrystals at 3 x10 17 cm-3 leads to increase of the magnetic field sensitivity, , to ? 1.1 V/AT, but it decreases to ? 0.45 V/AT at 450K. On the other hand doping with Bi at 1 x 1017 cm-3 gives ? 1 V/AT. The charge carriers mobility of the investigated microcrystals varies from about 2.11m2/V.s to 3.4 m2/V.s, for Te doped samples and from 3.2 m2/V.s to 4.3 m2/V.s for Bi doped samples at room temperature. The electrical resistivity variation with temperature was also studied.