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Electronic switch on MOS transistors with low voltage drop and low current leakage


Article Information

Title: Electronic switch on MOS transistors with low voltage drop and low current leakage

Authors: Ruslan Dombrovskiy, Alexander Odnolko, Mikhail Pavlyuk, Alexander Serebryakov

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2016

Volume: 11

Issue: 7

Language: English

Keywords: MOS transistorsElectronic switchLow voltage dropLow current leakage

Categories

Abstract

The paper considers a way to minimize the voltage drop of electronic switch on field-effect transistor (FET) in open state. It explains the advantage of using field-effect transistor for constructing electronic switch. The paper has also shown the influence of an output current of the gate of transistor on its conductivity. It compares the well-known electronic switch architectures, which are put equal to the common area. It also offers the architecture with a small magnitude of voltage drop in open state and low leakage current in closed state. The paper shows the results of open state electronic switch resistance simulation and also leakage current in closed state.


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