DefinePK hosts the largest index of Pakistani journals, research articles, news headlines, and videos. It also offers chapter-level book search.
Title: Electronic switch on MOS transistors with low voltage drop and low current leakage
Authors: Ruslan Dombrovskiy, Alexander Odnolko, Mikhail Pavlyuk, Alexander Serebryakov
Journal: ARPN Journal of Engineering and Applied Sciences
Publisher: Khyber Medical College, Peshawar
Country: Pakistan
Year: 2016
Volume: 11
Issue: 7
Language: English
Keywords: MOS transistorsElectronic switchLow voltage dropLow current leakage
The paper considers a way to minimize the voltage drop of electronic switch on field-effect transistor (FET) in open state. It explains the advantage of using field-effect transistor for constructing electronic switch. The paper has also shown the influence of an output current of the gate of transistor on its conductivity. It compares the well-known electronic switch architectures, which are put equal to the common area. It also offers the architecture with a small magnitude of voltage drop in open state and low leakage current in closed state. The paper shows the results of open state electronic switch resistance simulation and also leakage current in closed state.
Loading PDF...
Loading Statistics...