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An ultra-low power tunnel FET based OTA design for neural amplifier


Article Information

Title: An ultra-low power tunnel FET based OTA design for neural amplifier

Authors: Saravana Selvan, Umayal

Journal: ARPN Journal of Engineering and Applied Sciences

HEC Recognition History
Category From To
Y 2023-07-01 2024-09-30
Y 2022-07-01 2023-06-30
Y 2021-07-01 2022-06-30
X 2020-07-01 2021-06-30

Publisher: Khyber Medical College, Peshawar

Country: Pakistan

Year: 2022

Volume: 17

Issue: 3

Language: English

Categories

Abstract

Tremendous research is going on in healthcare and monitoring systems to develop the quality of Bio-signal Acquisition systems. Analog front end bio-amplifier circuit is a crucial part of the system used to amplify the desired bio-signal in a suitable low-frequency range by consuming some amount of power. It is very challenging to design a high gain operational transconductance amplifier (OTA) with ultra-low power consumption for wearable and implantable devices due to the limit of heat dissipation for protecting the tissues. Hence, this work proposes a Tunnel FET (TFET) device for designing a two-stage OTA because MOSFETs have a sub-threshold swing (SS) limitation of 60 mV/decade. TFET has the advantage of distinctive steep slope characteristics with SS value of less than 60 mV/decade. It provides a high ON-drive current and makes the OTA performance more energy-efficient, especially in ultra-low power and low voltage applications. The TFET based OTA with RC feedback network for the neural amplifier is proposed. The cadence spectre simulated results show a closed-loop gain of 44 dB in the frequency range of 1 Hz to 2.5 kHz with a low power consumption of 3.6 nW with 0.45 V supply voltage.


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